v rrm = 20 v - 40 v i f(av) = 600 a features ? high surge capability three tower package ? isolation type package ? electrically isolated base plate ? not esd sensitive parameter symbol mbrt60020(r) mbrt60030(r) unit repetitive peak reverse voltage v rrm 20 30 v rms reverse voltage v rms 14 21 v dc blocking voltage v dc 20 30 v ? types from 20 v to 40 v v rrm conditions 40 28 40 35 mbrt60020 thru mbrt60040r mbrt60040(r) 35 25 mbrt60035(r) maximum ratings, at t j = 25 c, unless otherwise specified ("r" devices have leads reversed) silicon power schottk y diode dc blocking voltage v dc 20 30 v operating temperature t j -55 to 150 -55 to 150 c storage temperature t stg -55 to 150 -55 to 150 c parameter symbol mbrt60020(r) mbrt60030(r) unit average forward current (per pkg) i f(av) 600 600 a maximum instantaneous forward voltage (per leg) 0.75 0.75 11 10 10 50 50 thermal characteristics maximum thermal resistance, junction - case (per leg) r jc 0.28 0.28 c/w t j = 100 c 10 10 t c =125 c 600 600 peak forward surge current (per leg) i fsm t p = 8.3 ms, half sine 4000 4000 4000 4000 v -55 to 150 -55 to 150 40 35 a -55 to 150 mbrt60040(r) 11 mbrt60035(r) 0.28 t j = 150 c 0.28 0.75 0.75 50 ma t j = 25 c i fm = 300 a, t j = 25 c conditions -55 to 150 electrical characteristics, at tj = 25 c, unless otherwise specified maximum instantaneous reverse current at rated dc blocking voltage (per leg) i r v f 50 www.genesicsem i.com/silicon \ products/schottky \ rectifiers/ 1
mbrt60020 thru mbrt60040r www.genesicsem i.com/silicon \ products/schottky \ rectifiers/ 2
package dimensions and terminal configuration product is marked with part number and terminal configuration. mbrt60020 thru mbrt60040r www.genesicsem i.com/silicon \ products/schottky \ rectifiers/ 3
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